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INTEGRATED CIRCUITS
DATA SHEET
TEA1204T High efficiency DC/DC converter
Product specification Supersedes data of 1996 Sep 05 File under Integrated Circuits, IC03 1998 Mar 02
Philips Semiconductors
Product specification
High efficiency DC/DC converter
FEATURES * Fully integrated DC/DC converter circuit * Up-or-down conversion, each in 2 different modes * High efficiency (up to 96%) at high loads * Output power up to 3.6 W (typ.) continuous, 8 W in GSM burst mode * Low quiescent power consumption * Burst mode input for optimal dynamic response to switching loads * True current limit for LiIon battery compatibility * Up to 100% duty cycle in down mode * Shut-down function * 8-pin SO package. APPLICATIONS * Cellular and cordless phones PDAs and others * Supply voltage source for low-voltage chip sets * Portable computers * Battery backup supplies * Cameras. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1204T SO8 DESCRIPTION plastic small outline package; 8 leads; body width 3.9 mm GENERAL DESCRIPTION
TEA1204T
The TEA1204T is a fully integrated DC/DC converter circuit using the minimum amount of external components. It is intended to be used to supply electronic circuits with supply voltages of 3.3, 3.6 or 5.0 V from 2, 3 or 4 NiCd cell batteries or one LiIon battery at an output power level up to 3.6 W (typ.) continuously, or 8 W in GSM TDMA (1 : 8) burst mode. Efficient, compact and dynamic power conversion is achieved using a novel, digitally controlled Pulse Width and Frequency Modulation (PWFM) like control concept, integrated low RdsON CMOS power switches with low parasitic capacitances and synchronous rectification.
VERSION SOT96-1
1998 Mar 02
2
Philips Semiconductors
Product specification
High efficiency DC/DC converter
QUICK REFERENCE DATA SYMBOL VO(up) VO(down) Vstart Efficiency efficiency from 2.4 to 3.3 V from 3.6 to 5.0 V from 5.0 to 3.6 V from 5.0 to 3.3 V Current levels Iq ISHDWN IlimN IlimP ILX(max) quiescent current at pin 3 shut-down current current limit NFET current limit PFET maximum continuous current at pin 5 up mode down mode up mode 50 - 2.38 2.05 - 60 2 2.80 2.40 - 1 mA < IL < 1.0 A 1 mA < IL < 1.0 A 1 mA < IL < 1.0 A 1 mA < IL < 1.0 A 83 82 80 78 90 90 92 90 PARAMETER output voltage in up mode output voltage in down mode start-up voltage CONDITIONS U/D = LOW, VSEL = LOW U/D = LOW; VSEL = HIGH U/D = HIGH; VSEL = LOW U/D = HIGH; VSEL = HIGH up mode MIN. 4.75 3.13 3.42 3.13 1.6 TYP. 5.05 3.34 3.64 3.34 2.0
TEA1204T
MAX. 5.35 3.54 3.85 3.54 2.2
UNIT V V V V V
95 94 95 94
% % % % A A A A A
70 10 3.20 2.75 1.0
Power MOSFETS RdsON(N) RdsON(P) Timing fsw tres switching frequency response time from standby to Pmax 150 - 200 25 240 - kHz s pin-to-pin resistance NFET pin-to-pin resistance PFET 0.08 0.10 0.12 0.16 0.20 0.25
1998 Mar 02
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andbook, full pagewidth
1998 Mar 02
LX 5 I/V CONVERTER IIimP I/V CONVERTER IIimN
BLOCK DIAGRAM
Philips Semiconductors
High efficiency DC/DC converter
P-type POWER FET
3
UPOUT/DNIN
sense FET START-UP CIRCUIT
TEA1204T
4 SENSE
CONTROL LOGIC AND MODE GEARBOX
4
TEMPERATURE PROTECTION ROM TIME COUNTER BANDGAP REFERENCE N-type POWER FET 20 MHz OSCILLATOR DIGITAL CONTROLLER sense FET 6 1 2 7 8
MGK923
GND
U/D
VSEL
BURST
SHDWN
Product specification
TEA1204T
Fig.1 Block diagram.
Philips Semiconductors
Product specification
High efficiency DC/DC converter
PINNING SYMBOL U/D VSEL UPOUT/DNIN SENSE LX GND BURST SHDWN PIN 1 2 3 4 5 6 7 8 DESCRIPTION conversion mode selection input output voltage selection input up mode; output voltage/ down mode; input voltage output voltage sense input inductor connection ground burst mode trigger input shut-down input
handbook, halfpage
TEA1204T
U/D 1 VSEL 2
8 7
SHDWN BURST GND LX
TEA1204T
UPOUT/DNIN 3 SENSE 4
MBH564
6 5
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION Control mechanism The TEA1204T DC/DC converter is able to operate in discontinuous or continuous conduction operation. All switching actions are completely determined by a digital control circuit which uses the output voltage level as its control input. This novel digital approach enables the use of a new pulse width and frequency modulation scheme, which ensures optimum power efficiency over the complete range of operation of the converter. The scheme works as follows. At low output power, a very small current pulse is generated in the inductor, and the pulse rate varies with a varying load. When the output voltage drops below a specific limit, which indicates that the converter's current capability is not sufficient, the digital controller switches to the next state of operation. The peak current in the inductor is made higher, and the pulse rate can again vary with a varying load. A third operational state is available for even higher currents. When high output power is requested, the device starts operating in continuous conduction mode. This results in minimum AC currents in the circuit components and hence optimum efficiency, cost, and EMC. In this mode, the output voltage is allowed to vary between two predefined voltage levels. As long as the output voltage stays within this so-called window, switching continues in a fixed pattern. When the output voltage reaches one of the window borders, the digital controller immediately reacts by adjusting the pulse width and inserting a current step in such a way that the output voltage stays within the window with higher or lower current capability. This approach enables very fast reaction to load variations. Figure 3 shows the various coil current waveforms for low and high current capability in each power conversion mode.
Figure 4 shows the converter's response to a sudden load increase. The upper trace shows the output voltage. The ripple on top of the DC level is a result of the current in the output capacitor, which changes in sign twice per cycle, times the capacitor's internal Equivalent Series Resistance (ESR). After each ramp-down of the inductor current, i.e. when the ESR effect increases the output voltage, the converter determines what to do in the next cycle. As soon as more load current is taken from the output the output voltage starts to decay. When the output voltage becomes lower than the low limit of the window, a corrective action is taken by a ramp-up of the inductor current during a much longer time. As a result, the DC current level is increased and normal continuous conduction mode can continue. The output voltage (including ESR effect) is again within the predefined window. Figure 5 depicts the spread of the output voltage window. The absolute value is most dependent on spread, while the actual window size is not affected. For one specific device, the output voltage will not vary more than 4%. Start-up A possible deadlock situation in boost configuration can occur after a sequence of disconnecting and reconnecting the input voltage source. If, after disconnection of the input source, the output voltage falls below 2.0 V, the device may not restart properly after reconnection of the input source, and may take continuous current from the input. An external circuit to prevent the deadlock situation is shown in Chapter "Application information".
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
Burst mode trigger input For burst-mode applications, in which the required output power periodically changes between two different power levels, the burst mode trigger feature gains optimal dynamic response. A digital signal indicating the load change must be connected to the burst pin. Polarity of the burst signal is arbitrary. When not used, the burst pin must be tied to pin 3 or pin 6. Shut-down When the shut-down pin is made HIGH, the converter disables both switches and power consumption is reduced to a few A. Power switches The power switches in the IC are one N-type and one P-type MOSFET, having a typical pin-to-pin resistance of 0.12 and 0.16 respectively. The maximum average current in the switches is 1.0 A. Temperature protection At too high device temperature (typical 165 C), the converter stops operating. It resumes operation when the device temperature falls below 165 C again. As a result, low-frequent cycling between on and off state will occur. It should be noted that in the event of device temperatures around the cut-off limit, the application differs strongly from maximum specifications. Current limiters If the current in one of the power switches exceeds its limit, current ramping is stopped immediately, and the next switching phase is entered. Current limitation is required to enable optimal use of energy in Lithium-Ion batteries, and to keep power conversion efficient during temporary high loads. Furthermore, current limitation protects the IC against overload conditions, inductor saturation, etc.
low DC current medium power mode 1
TEA1204T
Behaviour at input voltage exceeding the specified range In general, an input voltage exceeding the specified range is not recommended since instability may occur. There are two exceptions: * Upconversion: at an input voltage equal to or higher than the target output voltage, but up to 6 V, the converter will stop switching and the external schottky diode will take over, resulting in Vo equalling Vi minus the diode voltage drop. * Downconversion: when the input voltage is equal to or lower than the target output voltage, but higher than 2.6 V, the P-type FET will stay conducting resulting in Vo being equal to Vi minus some resistive voltage drop. The current limit function remains active.
handbook, halfpage
low power mode
medium power mode 2
increasing load
high DC current time
MGK924
Fig.3
Coil current waveforms in the various power modes.
1998 Mar 02
6
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1204T
andbook, full pagewidth
load increase Vo
start corrective action high window limit low window limit
time
IL
time
MGK925
Fig.4 Response to load increase.
handbook, full pagewidth
5.35 Vo Vh 5.15 4%
maximum positive spread Vh +3% 4%
upper specification limit
Vl +3%
-3% Vh
4.95 Vl -3% 4% Vl 4.75 lower specification limit typical situation maximum negative spread
MGK926
Fig.5 Output voltage window at typical, maximum and minimum specification.
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vn Tj Tamb Tstg Ves Note PARAMETER voltage on any pin junction temperature operating ambient temperature storage temperature electrostatic handling note 1 CONDITIONS shut-down mode operational mode MIN. -0.2 -0.2 -25 -40 -65 -3000
TEA1204T
MAX. +6.5 +5.9 +150 +80 +125 +3000 V V
UNIT
C C C V
1. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 150 UNIT K/W
QUALITY SPECIFICATION In accordance with "SNW-FQ-611 part E". The numbers of the quality specification can be found in the "Quality Reference Handbook". The handbook can be ordered using the code 9397 750 00192. CHARACTERISTICS Tj = -20 to +80 C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified. SYMBOL Supplies VO(up) VO(down) Vstart Efficiency efficiency from 2.4 to 3.3 V from 3.6 to 5.0 V from 5.0 to 3.6 V from 5.0 to 3.3 V 1 mA < IL < 1.0 A 1 mA < IL < 1.0 A 1 mA < IL < 1.0 A 1 mA < IL < 1.0 A 83 82 80 78 90 90 92 90 95 94 95 94 % % % % output voltage in up mode output voltage in down mode start-up voltage U/D = LOW, VSEL = LOW U/D = LOW; VSEL = HIGH U/D = HIGH; VSEL = LOW U/D = HIGH; VSEL = HIGH up mode 4.75 3.13 3.42 3.13 1.6 5.05 3.34 3.64 3.34 2.0 5.35 3.54 3.85 3.54 2.2 V V V V V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1204T
SYMBOL Current levels Iq ISHDWN IlimN IlimP ILX(max)
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT A A A A A
quiescent current at pin 3 shut-down current current limit NFET current limit PFET maximum continuous current at pin 5
up mode up mode; note 1 down mode; note 1
50 - 2.38 2.05 -
60 2 2.80 2.40 -
70 10 3.20 2.75 1.0
Power MOSFETS RdsON(N) RdsON(P) Timing fsw tres switching frequency response time from standby to Pmax operating ambient temperature internal cut-off temperature 150 - 200 25 240 - kHz s pin-to-pin resistance NFET pin-to-pin resistance PFET 0.08 0.10 0.12 0.16 0.20 0.25
Temperature Tamb Tmax VlL VIH VIH VIH -20 150 +25 165 - +80 180 C C
Digital levels LOW-level input voltage pins 1, 2, 7 and 8 HIGH-level input voltage pin 1 HIGH-level input voltage pin 2 HIGH-level input voltage pins 7 and 8 note 2 notes 2 and 3 notes 2 and 3 0 0.4 V
V3 - 0.4 - 2.0 2.9 - -
V3 + 0.3 V V3 + 0.3 V V3 + 0.3 V
Sense pin resistance RSENSE SENSE pin resistance to GND up or down to 3.3 V mode down to 3.6 V mode up to 5.0 V mode Notes 1. The average inductor current during current limit also depends on inductance value and resistive losses in all components in the power path. In normal applications, the average current will be limited to 2.3 A (typ.), with limits scaled down to minimum 2.07 A and maximum 2.53 A. 2. V3 is the voltage at pin 3 (UPOUT/DNIN). 3. If the applied high level is less than V3 - 1 V, the quiescent current level of the device will increase. The maximum increase is 300 A in the event that pin 2 is at 2.0 V. 437.2 476.8 662.2 546.5 596.0 827.8 655.8 715.2 993.4 k k k
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
APPLICATION INFORMATION
TEA1204T
handbook, full pagewidth
D1
UPOUT/DNIN L1 VI LX
VO
TEA1204T
SENSE
C1
GND
U/D VSEL
BURST SHDWN
C2
MGK928
Fig.6 Complete application for upconversion.
handbook, full pagewidth
VI
SENSE UPOUT/DNIN L1 LX VO
TEA1204T
C1 GND U/D VSEL
BURST SHDWN
D1
C2
MGK929
Fig.7 Complete application for downconversion.
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
A typical component choice for an upconverter from 3 NiCd cells or one LiIon cell to 5.0 V in a GSM handset (peak power 7.5 W, peak current 2.7 A) is: * L1; L = 10 H; Isat >2.3 A; low DC resistance, e.g. Coilcraft DO3308-103 * C1; C = 100 F; low ESR capacitor; necessity depends on type of input voltage source * C2; C = 330 F; ESR = 0.1 ; e.g. Sprague 595D series * D1; medium power Schottky diode; e.g. Philips PRLL5819. For lower power applications, the Isat and RDC values of the inductor can be scaled back by the scaling factor of the output current from the values above. The same holds for the ESR value of the output capacitor. A further improvement is increase of inductance and decrease of output capacitance. An additional circuit to prevent start-up deadlock in upconversion is shown in Fig.8. The function of TR1, R1 and R2 is to put the converter into shut-down mode when the input source is suddenly disconnected. The circuit operates as follows. When VI is present, TR1 conducts and the SHDWN pin is kept LOW. As soon as VI falls below 1 V, TR1 no longer conducts and the device is put into shut-down before VO falls below 2 V. In the event that a signal is available which indicates the presence of the input voltage source, this signal should be applied to the SHDWN pin. TR1, R1 and R2 should be omitted in that case.
R2 VI 2.7 M TR1
handbook, halfpage
TEA1204T
More application information can be found in the associated application note.
VO R1 1 M SHDWN
MGK930
Fig.8 External deadlock prevention circuit.
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1204T
handbook, full pagewidth
100
MGM601
efficiency (%) 90
80
70
60
50
40 10-1
1
10
102
IL (mA)
103
Using a Coilcraft DO3316P 10 H inductor and a Sprague 595D 330 F capacitor. The dashed line represents the Pulse Frequency Modulation (PFM) and the full line the Pulse Width Modulation (PWM).
Fig.9 Efficiency as a function of load current (2.4 to 3.3 V).
handbook, full pagewidth
100
MGM602
efficiency (%) 90
80
70
60
50
40 10-1
1
10
102
IL (mA)
103
Using a Coilcraft DO3316P 10 H inductor and a Sprague 595D 330 F capacitor. The dashed line represents the Pulse Frequency Modulation (PFM) and the full line the Pulse Width Modulation (PWM).
Fig.10 Efficiency as a function of load current (3.6 to 5.0 V).
1998 Mar 02
12
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1204T
handbook, full pagewidth
100
MGM603
efficiency (%) 90
80
70
60
50
40 10-1
1
10
102
IL (mA)
103
Using a Coilcraft DO3316P 10 H inductor and a Sprague 595D 330 F capacitor. The dashed line represents the Pulse Frequency Modulation (PFM) and the full line the Pulse Width Modulation (PWM).
Fig.11 Efficiency as a function of load current (5.0 to 3.3 V).
handbook, full pagewidth
100
MGM604
efficiency (%) 90
80
70
60
50
40 10-1
1
10
102
IL (mA)
103
Using a Coilcraft DO3316P 10 H inductor and a Sprague 595D 330 F capacitor. The dashed line represents the Pulse Frequency Modulation (PFM) and the full line the Pulse Width Modulation (PWM).
Fig.12 Efficiency as a function of load current (5.0 to 3.6 V).
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
TEA1204T
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-05-22
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
TEA1204T
Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1204T
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
NOTES
TEA1204T
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
NOTES
TEA1204T
1998 Mar 02
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Philips Semiconductors
Product specification
High efficiency DC/DC converter
NOTES
TEA1204T
1998 Mar 02
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
415102/1200/02/pp20
Date of release: 1998 Mar 02
Document order number:
9397 750 02734

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